News: Microelectronics
1 August 2025
Navitas powering Xiaomi’s 90W next-gen GaN charger
Gallium nitride (GaN) power IC and silicon carbide (SiC) technology firm Navitas Semiconductor Corp of Torrance, CA, USA says that its GaNSense Control ICs are to power the next-generation 90W GaN charger of China’s Xiaomi.
Claimed to be the world’s smallest 90W charger, the ultra-compact, high-power-density form factor measures just 34mm x 45mm x34mm and weighs only 65g — about half the size and a third the weight of typical GaN chargers.
The charger integrates Navitas’ NV9580 GaNSense Control power IC on the primary side and the NV9701 synchronous rectification controller IC on the secondary side. The GaNSense Control family combines fourth-generation GaN power with high-frequency control functionality. It provides all the benefits of a monolithically integrated GaN power FET and GaN drive, plus a controller and protection features in a single surface-mount package for high-density, high-efficiency chargers, adapters and auxiliary power designs.
GaNSense Control ICs are said to deliver the highest-frequency operation to minimize system size and weight. Integrated features such as lossless current sensing, high-voltage start-up, and elimination of the VDD inductor reduce component count and increase system efficiency. With transient voltage breakdown up to 800V and no PCB hotspots, Navitas’ GaNSense Control ICs deliver what is claimed to be best-in-class efficiency in the smallest form factor.
“The launch of Xiaomi’s 90W GaN charger marks a new milestone in our long-standing collaboration with Xiaomi,” says Charles Zha, Navitas’ senior VP & APAC general manager. “Combining the innovation of GaNSense Control ICs and Xiaomi’s leading system expertise, we have delivered a new benchmark for ultra-portable fast-chargers,” he adds. “Navitas will continue our partnership with Xiaomi to continue future innovations with our GaN technology.”
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