News: Microelectronics
25 August 2025
Innoscience and United Electronics establish joint lab to develop GaN power electronics systems for EVs
InnoScience (Suzhou) Technology Holding Co Ltd — which manufactures gallium nitride on silicon (GaN) power chips on 8” silicon wafers — and China’s largest tier-1 automotive supplier United Automotive Electronic Systems Co Ltd (UAES, a joint venture established in 1995 by China’s Zhonglian Automotive Electronics Co Ltd and Germany’s Robert Bosch GmbH) have established a joint laboratory to develop advanced power electronics systems for new energy vehicles using the advantages of GaN technology in size, weight, and efficiency. The two parties held an unveiling ceremony at UAES (Suzhou R&D Center).
“This cooperation will strengthen the cooperation between the two parties, including senior management,” says United Electronics deputy general manager Dr Xiaolu Guo. “We have developed a high-power-density on-board charger based on GaN,” he adds. “We look forward to continuing to strengthen our cooperation through this laboratory, boosting the innovation of GaN OBC solution.”
UAES is a “global leader in automotive electronics and a technology leader in wide-bandgap power device applications,” comments Innoscience’s CEO Dr Jingang Wu. “Innoscience has developed the industry’s highest-performance and highest-reliability GaN process, covering a voltage range from 15V to 1200V, and has the world’s largest 8-inch production capacity,” he claims. “We look forward to working with UAES to fully leverage our strengths in GaN and contribute to GaN-based electric vehicle technology innovation.”
Innoscience and Midea partner to accelerate GaN adoption in home appliance industry
