News: LEDs
1 August 2025
Munich District Court rules in favor of Infineon in patent-infringement case against Innoscience
Infineon Technologies AG of Munich, Germany says that the Munich District Court (Landgericht München I) has ruled in favor of it in a first instance patent infringement case alleging the unauthorized use of its patented gallium nitride (GaN) technologies by InnoScience (Suzhou) Technology Holding Co Ltd, which manufactures GaN-on-Si power chips on 8” silicon wafers.
The court found that Infineon’s patent was infringed by GaN products that Innoscience is offering in Germany. The decision in particular prohibits Innoscience from manufacturing, selling or marketing the infringing products in Germany. It also requires Innoscience to pay damages to Infineon.
Infineon says that the decision underscores the value of its contributions to GaN technology and its ongoing commitment to ensuring fair competition in the market. “The ruling is a testament to the strength of Infineon’s intellectual property and confirms Infineon’s commitment to vigorously defend its intellectual property against infringements,” says Johannes Schoiswohl, senior VP & head of Infineon’s GaN Systems business line.
Infineon says that it is continuously strengthening its position as an integrated device manufacturer (IDM) in the GaN market with a broad IP portfolio comprising about 450 GaN patent families.
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