News: Microelectronics
26 August 2025
CGD appoints Robin Lyle as VP R&D
Fabless firm Cambridge GaN Devices Ltd (CGD) — which was spun out of the University of Cambridge in 2016 to design, develop and commercialize power transistors and ICs that use GaN-on-silicon substrates — has appointed Robin Lyle, a 30-year veteran of the power semiconductor industry, as vice president of R&D.
“In my previous positions I worked on higher-power systems, modules and gate drivers, all of which are beginning to enjoy the size, efficiency and speed benefits that GaN brings,” says Lyle. “GaN will enable applications that haven’t been possible before, and our ICeGaN ICs – by integrating the driver interface circuitry and protection features on the same GaN chip as the switch – make implementing GaN-based designs very easy.”
With a background in analog and power semiconductor technology, most recently at power module company Dynex, Lyle’s experience is expected to prove invaluable as CGD develops its product portfolio to address the power-hungry demands of data centers, higher-power industrial power supplies and EV applications such as DC-to-DC converters, on-board chargers and even traction inverters. Lyle is also closely connected with academia, including a formal position at the University of Nottingham where he is part of the industrial advisory board for electronic engineering, helping to shape the syllabus and working with the under-graduates.
“CGD is a company founded on new ideas and innovation and this appointment strengthens our capabilities in high-power systems,” says founder & CEO Dr Giorgia Longobardi.
“Our focus is to continue to develop innovative GaN solutions that address the challenges customers face as they move up in power, and to make GaN easy to use,” says Lyle.
CGD’s ICeGaN ICs used by Inventchip in 2.5kW CCM totem-pole PFC reference design
CGD demos ICeGaN in motor drives, data centers and EVs at PCIM
