News: Microelectronics
15 April 2025
Mitsubishi Electric to ship samples of full-SiC and hybrid-SiC SLIMDIP modules
On 22 April, Tokyo-based Mitsubishi Electric Corp will begin shipping samples of two new SLIMDIP series power semiconductor modules for room air conditioners and other home appliances.
As the first silicon carbide (SiC) versions in the company’s SLIMDIP series of compact, terminal-optimized modules, both the Full SiC SLIMDIP (PSF15SG1G6) and the Hybrid SiC SLIMDIP (PSH15SG1G6) are said to achieve excellent output and power loss reduction for energy savings in small- to large-capacity appliances. The new modules are being exhibited at the Power Conversion Intelligent Motion (PCIM 2025) Expo & Conference in Nuremberg, Germany (6–8 May) as well as trade shows in Japan, China and other countries.
Mitsubishi Electric’s newly developed silicon carbide metal–oxide–semiconductor field-effect transistor (SiC-MOSFET) chip is incorporated into both new SLIMDIP packages. Compared with exiting silicon (Si)-based reverse-conducting insulated-gate bipolar transistor (RC-IGBT) SLIMDIP modules, the new SiC modules achieve higher output for larger-capacity appliances. Additionally, compared with the Si-based module, power loss is reduced by 79% with the Full SiC SLIMDIP and by 47% with the Hybrid SiC SLIMDIP for more energy-efficient appliances.
With these two new modules as well as existing Si-based RC-IGBT SLIMDIP modules, the SLIMDIP series now offers three options for use in inverter boards of appliances such as room air conditioners, each one suited to specific electrical capacity and performance needs, but all offered in the same package to help reduce the burden of designing inverter substrates.