News: Microelectronics
29 April 2025
Infineon launches CoolSiC MOSFET 750V G2 technology
Infineon Technologies AG of Munich, Germany has launched CoolSiC MOSFET 750V G2 technology, designed to deliver improved system efficiency and increased power density in automotive and industrial power conversion applications. The CoolSiC MOSFETs 750V G2 technology offers a granular portfolio with typical RDS(on) values up to 60mΩ at 25°C, making it suitable for a wide range of applications, including on-board chargers (OBCs), DC-DC converters, auxiliaries for electric vehicles (xEVs) as well as industrial applications in EV charging, solar inverter, energy storage systems, telecom and SMPS.
The ultra-low RDS(on) values 4mΩ and 7mΩ enable what is claimed to be outstanding performance in static-switching applications, making the MOSFETs suitable for applications such as eFuse, high-voltage battery disconnect switches, solid-state circuit breakers, and solid-state relays. The best-in-class lowest RDS(on) 4mΩ is featured in Infineon’s top-side cooled Q-DPAK package, which is designed to provide optimal thermal performance and reliability.
Picture: Infineon’s new CoolSiC 750V G2.
The technology also exhibits what are claimed to be excellent RDS(on) x QOSS and best-in-class RDS(on) x Qfr, contributing to reduced switching loss in both hard-switching and soft-switching topologies with superior efficiency in hard-switching user cases. With reduced gate charge, the technology allows for faster switching and reduces gate drive losses, making them more efficient in high-frequency applications.
Additionally, the CoolSiC MOSFETs 750V G2 offer a combination of high threshold voltage VGS(th),typ of 4.5V at 25°C and ultra-low QGD/QGS ratio, which reinforce robustness against parasitic turn-on (PTO). Furthermore, the technology allows for extended gate-driving capabilities, supporting static gate voltages of up to -7V and transient gate voltages of up to -11V. This enhanced voltage tolerance provides engineers with greater design margins and best compatibility with other devices in the market.
The CoolSiC 750V G2 delivers what is claimed to be unparalleled switching performance, ease-of-use and superior reliability with firm adherence to AEC Q101 standards for automotive-grade parts and JEDEC standard for industrial-grade parts. It enables a more efficient, compact and cost-effective designs to fulfill the ever‑growing market needs and underscores its commitment to reliability and longevity in safety-critical automotive applications.
Infineon's CoolSiC MOSFET 750V G2 Q-DPAK 4/7/16/25/60mΩ samples are available to order.
Infineon showcasing power device solutions at PCIM
Infineon adds Q-DPAK and TOLL packages to industrial CoolSiC MOSFETs 650V G2 range
