AES Semigas


28 June 2024

SMC opens second power MOSFET and diode fab in Nanjing

American-led semiconductor design and manufacturing company SMC Diode Solutions (which was founded in 1997) has celebrated the opening of its second power discrete fab in Nanjing, China.

The new facility achieved volume production only 21 months after groundbreaking in September 2022, and will begin shipments to customers in fourth-quarter 2024 for high-power and high-voltage rectifiers and MOSFET 6-inch and 8-inch wafers.

As Nanjing is also home to its existing fab, resources and engineering talent, SMC says that the city was an advantageous choice for the new fab location. With its experienced management team, starting up the new fab was said to be a seamless process.

SMC Diode Solutions’ new fab in Nanjing, China.

Picture: SMC Diode Solutions’ new fab in Nanjing, China.

SMC says that the new fab marks a milestone in its growth as it further invests in China and the growing renewable energy sector. The 300,000ft2 facility is set to produce 1.2 million silicon wafers and 60,000 silicon carbide wafers per year, increasing SMC’s total production by over four times. SMC’s existing fab in Lukou, Nanjing produces 300,000 silicon wafers per year. The RMB3bn investment in the new fab will allow SMC to handle the end-to-end production of silicon carbide products for the first time.

As well as silicon Schottky rectifier diodes, ultrafast recovery rectifier diodes, TVS diodes, and Schottky and rectifier modules, SMC’s product portfolio includes silicon carbide Schottky rectifiers and MOSFETs.

“As the world moves towards using more and more renewable energy, we are thrilled to now be able to participate in the sector and be part of the solution to increase green energy usage,” says SMC’s chairwoman & CEO Dr Yunji Corcoran.

Tags: SiC Schottky barrier diodes SiC power MOSFET



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