AES Semigas


27 February 2024

Finwave showcases performance improvements with GaN-on-Si technology at MWC Barcelona

In its meeting room (Hall 2, #2D12MR) on the show floor at Mobile World Congress (MWC) Barcelona (26–29 February), Finwave Semiconductor Inc of Waltham, MA, USA is hosting demonstrations of its latest technology and products, including unveiling the newest performance benchmarks with its gallium nitride on silicon (GaN-on-Si) technology and high-power switches targeting the infrastructure and handset markets.

Differentiated from conventional depletion-mode (Dmode) GaN technology, Finwave’s says that its enhancement-mode (Emode) 200mm GaN-on-Si RF field-effect transistors (FETs) have less than 1Ω-mm on-resistance, low-knee voltage, >700mS/mm transconductance and negligible current collapse with power-added efficiency (PAE) as high as 60% and what is claimed to be excellent AM-PM performance for operating frequency ranging from 8GHz to 26GHz. The technology is capable of operating at a Vdd of 5V or lower, demonstrating its potential for efficient power amplifiers for 6G FR3 frequency band (7–24GHz) and FR2 mmWave-band infrastructure, CPEs and handset applications.

Furthermore, Finwave is showcasing its 3DGaN FinFET technology demonstrating its linearity improvement capability. Due to its three-dimensional gate geometry, Finwave’s 3DGaN FinFET reduces transistor leakage current, current collapse and knee voltage while improving PAE and linearity over 10dB compared with conventional GaN transistors, it is reckoned. With higher linearity, better PAE and reduced memory effect, 3DGaN FinFET technology is suitable for applications such as massive MIMO with large arrays.

Finwave is also unveiling its first family of high-power RF switch products. These feature 100ns fast switching and settling time, broadband operations up to 12GHz and high power handling up to 40W. The combination of broadband operation, fast switching and high power handling sets it apart from existing offerings, it is reckoned.
“Our technology has already demonstrated its ability to deliver extremely high performance in higher-frequency applications, and the implications of that are very exciting – for both infrastructure and handsets,” says CEO Dr Pierre-Yves Lesaicherre. “Additionally, we are making strong progress in moving our patented GaN-on-Si technology from the MIT lab to high-volume production.”

See related items:

Finwave appoints Pierre-Yves Lesaicherre as CEO

Finwave joins American Semiconductor Innovation Coalition

Finwave joins MITRE Engenuity’s Semiconductor Alliance

Finwave raises $12.2m in Series A round to bring 3DGaN to volume production

Tags: GaN-on-Si millimeter-wave



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