AES Semigas


22 April 2024

ROHM’s SiCrystal and ST expand silicon carbide wafer supply agreement

ROHM group of Kyoto, Japan and STMicroelectronics of Geneva, Switzerland have expanded the existing multi-year, long-term 150mm silicon carbide (SiC) substrate wafers supply agreement with ROHM group company SiCrystal GmbH of Erlangen, Germany. The new multi-year agreement governs the supply of larger volumes of SiC substrate wafers manufactured in Nuremberg for a minimum expected value of $230m.

“This expanded agreement with SiCrystal will bring additional volumes of 150mm SiC substrate wafers to support our device manufacturing capacity ramp-up for automotive and industrial customers worldwide,” notes ST’s executive VP & chief procurement officer Geoff West. “It helps strengthen our supply chain resilience for future growth, with a balanced mix of in-house and commercial supply across regions,” he adds.

“We will continue to support our partner to expand SiC business by ramping up 150mm SiC substrate wafer quantities continuously,” says Dr Robert Eckstein, president & CEO of SiCrystal.

See related items:

ROHM highlights new power semiconductor developments and SiC capacity investment

ROHM’s SiCrystal wins $120m multi-year deal to supply 150mm silicon carbide wafers to ST

Tags: Rohm SiC substrates STMicroelectronics




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