News: Microelectronics
5 September 2023
ST to supply third-gen 750V silicon carbide power MOSFET dice to BorgWarner
STMicroelectronics of Geneva, Switzerland is to supply BorgWarner Inc of Auburn Hills, MI, USA (which provides sustainable mobility solutions for the vehicle market) with the latest third-generation 750V silicon carbide (SiC) power MOSFETs dice for their proprietary Viper-based power module, used in its traction inverter platforms for several current and future Volvo Cars electric vehicles (EVs).
“This collaboration will give Volvo Cars the opportunity to further increase the attractiveness of our electrical vehicles with longer range and faster charging,” says Volvo Cars’ chief operating officer & deputy CEO Javier Varela. “It will also support us on our journey towards being fully electric by 2030 and strengthen our increased vertical integration and our control of critical components,” he adds.
“BorgWarner is pleased to partner with ST to supply our longstanding customer Volvo Cars with inverters for their next-generation of BEV platforms,” says Stefan Demmerle, VP of BorgWarner Inc and president & general manager, PowerDrive Systems.
To fully leverage the performance of ST’s SiC MOSFET dice, BorgWarner collaborated with ST’s technical team to match their die with BorgWarner’s Viper power switch, maximizing inverter performance and delivering a compact and cost-effective architecture. The collaboration targets the high-volume capability required by the rapidly growing EV market.
“We are committed to expanding SiC capacity and to reinforcing our SiC supply, including through vertical integration, as we ramp up volumes to support our global automotive and industrial customers in their shift to electrification and higher efficiency,” says Marco Monti, president of ST’s Automotive and Discrete Group.
ST’s high-volume STPOWER SiC products are manufactured in its fabs in Italy and Singapore, with packaging and testing at its back-end facilities in Morocco and China. In October 2022, it announced it would expand its wide-bandgap manufacturing capacity with a new integrated SiC substrate manufacturing facility in Catania, Italy, home to the firm’s power semiconductor expertise and the site of integrated SiC research, development and manufacturing.
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