AES Semigas


12 October 2023

Transphorm launches 650V SuperGaN FETs in TOLL packages with on-resistances of 35m Ω, 50m Ω and 72m Ω

Transphorm Inc of Goleta, near Santa Barbara, CA, USA — which designs and manufactures JEDEC- and AEC-Q101-qualified gallium nitride (GaN) field-effect transistors (FETs) for high-voltage power conversion — has introduced three 650V SuperGaN FETs in TOLL packages with on-resistances of 35m Ω, 50m Ω and 72m Ω. Transphorm’s TOLL package configuration is industry standard, so the SuperGaN TOLL FETs can be used as drop-in replacements for any E-mode TOLL solution. The new devices also offer Transphorm’s proven high-voltage dynamic (switching) on-resistance reliability that is generally lacking in leading foundry-based E-mode GaN offerings, it is claimed.

Currently available to sample, the three 10mm x 12mm surface-mount devices (SMDs) support higher-power applications operating within an average range of 1–3kW. These power systems are typically found in high-performance segments such as computing (AI, server, telecom, data center), energy and industrial (PV inverters, servo motors), and other broad industrial markets which, collectively, have a current global GaN total addressable market (TAM) of $2.5bn. The FETs are said to be optimal solutions for today’s rapidly expanding AI systems that rely on GPUs requiring 10–15 times the power of traditional CPUs.

Transphorm’s high-power GaN devices are already widely supplied to leading customers who use them to power in-production high-performance systems including data-center power supplies, high-power gaming PSUs, UPSs, and micro-inverters. These applications can also be supported by the TOLL devices, as can electric-vehicle-based DC-to-DC converters and on-board chargers, with the underlying SuperGaN die already automotive (AEC-Q101) qualified.

Because the normally-off D-mode platform pairs the GaN HEMT with a low-voltage silicon MOSFET, the SuperGaN FETs are said to be easy to drive with commonly used off-the-shelf gate drivers. They can be used in various hard- and soft-switching AC-to-DC, DC-to-DC and DC-to-AC topologies to increase power density while reducing system size, weight and overall cost.

See related items:

Transphorm adds 50m Ω 650V SuperGaN FET in TO-263, extending SMDs to high-power applications

Tags: Transphorm GaN-on-Si GaN HEMT


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