News: Suppliers
28 November 2023
OIPT wins orders for ALE and ALD systems from Japanese GaN HEMT foundries
Oxford Instruments Plasma Technology (OIPT) of Yatton, near Bristol, UK says that it has received significant orders for plasma atomic layer deposition (ALD) and atomic layer etch (ALE) systems for gallium nitride (GaN) high-electron-mobility transistor (HEMT) device production from several market-leading Japanese foundries. The systems will support high-growth GaN power electronics and radio frequency markets, with consumer fast-charging and data-center applications at the forefront for power electronics, and 5G/6G communication applications for the RF market.
Oxford Instruments says that its ALD technology delivers high-throughput, low-damage plasma processing with enhanced film and interface quality, and is positioned globally at market-leading GaN HEMT device manufacturers. Its ALE solution for p-GaN HEMTs is production-qualified and combines low-damage etching with what is claimed to be unmatched accuracy with Etchpoint, a unique end-point detection collaboration with in-situ metrology system maker LayTec AG of Berlin, Germany.
Etchpoint, an exclusive collaboration between Oxford Instruments and LayTec, allows automated switching from standard high-rate etch processing to low-damage ALE to support improved device reliability. In addition, ALE enables partial aluminium gallium nitride (AlGaN) recess etches with a critical target depth, to an unparalleled accuracy of ±0.5nm, for next-generation GaN MISHEMT E-mode device functionality. These technologies can be clustered on an automated handler that enables multi-chamber processing without breaking vacuum, which can potentially improve device performance and deliver more good wafers per day at lower cost.
“Japan is delivering a significant ramp in GaN HEMT production for key power electronics and RF markets, and we are benefitting from this by expanding our install base at existing and new customers,” says GaN product manager Dr Aileen O’Mahony. “It is exciting to see our implemented at leading Japanese and global GaN HEMT manufacturers,” she adds. “Our complete GaN HEMT solution is designed to solve complex customer device challenges, with production-class throughput, reliability and up-time.”
In stand #5609 at SEMICON Japan 2023 in Tokyo (13–15 December) a team of plasma process and equipment experts from Oxford Instruments is available to discuss the firm’s GaN ALE with Etchpoint and ALD with pre-treatment, Plasma Polish silicon carbide (SiC) substrate prep, etch, deposition and complementary metrology technology.
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