AES Semigas


30 March 2023

NoMIS Power partners with Hyundai to evaluate and develop high-voltage power semiconductor device designs and packaging

NoMIS Power of Albany, NY, USA, which was spun off from State University of New York Polytechnic Institute (SUNY Poly) in 2020, has embarked on a new partnership with South Korea-based automotive firm Hyundai Group to evaluate and develop novel power semiconductor device designs and packaging for high-voltage power devices.

Working in collaboration with a network of partners across areas related to materials, device design, fabrication and packaging, the NoMIS team will explore the suitability of different novel device architectures and packaging approaches for high-voltage applications.

The project will evaluate gallium oxide (Ga2O3) Schottky diodes, metal–semiconductor field-effect transistors (MESFETs) and metal–oxide–semiconductor field-effect transistors (MOSFETs) with different gate structures and field management approaches to identify a path to next-generation performance in wide-bandgap power semiconductor devices. Ultimately, this means that the next-generation power semiconductor device could lead to potential applications that include improved electric vehicle motor drives and on-board/off-board chargers with enhanced power density and efficiency beyond the performance of existing technology.

The relationship with Hyundai Motor Company “brings together the experience and research interests of both groups while fostering a commercialization pathway for the developed technology,” says NoMIS Power’s CEO Dr Adam Morgan. “The electrification of high-power applications, particularly in the transportation space, motivates us to pursue the next generation of power semiconductor technology,” he adds.

See related items:

NoMIS to provide SiC power semiconductor devices and modules

Tags: Power electronics Gallium oxide


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