AES Semigas


31 March 2023

Diodes Inc adds N-channel MOSFET to silicon carbide product portfolio

Power semiconductor product supplier Diodes Inc of Plano, TX, USA has added to its portfolio of silicon carbide (SiC) products with the DMWS120H100SM4 N-channel SiC MOSFET, which addresses demand for higher efficiency and higher power density for applications such as industrial motor drives, solar inverters, data center and telecom power supplies, DC–DC converters, and electric vehicle (EV) battery chargers.

The DMWS120H100SM4 operates at a high voltage (1200V) and drain current (up to 37A) while maintaining low thermal conductivity (RθJC = 0.6°C/W), making it suited to applications running in harsh environments. The MOSFET has a low RDS(ON) on-resistance (typical) of only 80mΩ (for a 15V gate drive) to minimize conduction losses and provide higher efficiency. In addition, the device has a gate charge of only 52nC to reduce switching losses and lower the package temperature.

The new product is said to be the first SiC MOSFET on the market in a TO247-4 package. The additional Kelvin sense pin can be connected to the source of the MOSFET to optimize the switching performance, enabling even higher power densities.

The DMWS120H100SM4 is available at $21.50 in 20-unit quantities.

See related items:

Diodes Inc launches its first silicon carbide Schottky barrier diodes

Tags: SiC Schottky barrier diodes


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