News: Microelectronics
8 December 2023
Navitas powers NIO Phone with fast charging and EV interaction
Gallium nitride (GaN) power IC and silicon carbide (SiC) technology firm Navitas Semiconductor Corp of Torrance, CA, USA says that new-energy vehicle maker NIO Inc has released its inaugural smartphone, the NIO Phone with a 66W fast charger featuring its GaNFast power ICs equipped with GaNSense technology. This enhancement delivers flagship-level charging efficiency, providing end users with better vehicle-centric mobile interconnection.
Using NIO Link panoramic-interconnection technology, the NIO Phone integrates with smart EVs and NIO’s in-car system. With a single click, the driver can control over 30 functions and, equipped with ultra-wideband technology, it can completely replace traditional car keys.
To support such powerful and comprehensive features, the NIO Phone is equipped with a large 5200mAh battery and an in-box GaNFast charger offering up to 66W of charging power. In a high-frequency quasi-resonant (HFQR) topology with loss-less current sensing and ultra-fast autonomous short-circuit protection, the NV6136 GaNFast power IC measures only 57mm x 57mm x 30mm (97.5cc), delivering power density of 1.03W/cc.
“Navitas’ GaNFast ICs deliver top power-density performance with easy-to-use features,” comments Wu Gongli, general manager of R&D for TenPao, the manufacturing partner for the NIO Phone. “The combination of high efficiency and fast design accelerates our time-to-market,” he adds.
“This is just the beginning of our collaboration,” says Yingjie (Charles) Zha, VP & general manager of Navitas China. “In the future, Navitas will spare no effort to deeply-integrate energy-saving, sustainable, world-leading GaN and SiC technology into NIO Phone’s DNA.”
