AES Semigas


5 September 2022

Toshiba launches third-generation SiC MOSFETs

Tokyo-based Toshiba Electronic Devices & Storage Corp (TDSC) - spun off from Toshiba Corp in 2017 - has launched the new TWxxNxxxC series of power devices, its third-generation silicon carbide (SiC) metal-oxide-semiconductor field-effect transistors (MOSFETs), delivering low on-resistance and significantly reduced switching loss.

Specifically, on-resistance per unit area (R DS(ON)A) is reduced by about 43% by using a device structure with a built-in Schottky barrier diode developed for the second-generation MOSFETs, and also reduces feedback capacitance in the JFET region.

This allows a reduction of about 80% in the drain-source on-resistance * gate-drain charge (RDS(ON)*Qgd) product (representing the relationship between conduction loss and switching loss). This cuts the switching loss by about 20%, and lowers both on-resistance and switching loss. The new products hence contribute to higher equipment efficiency, says Toshiba.

Ten products, five 1200V and five 650V products, are shipping now. Applications include: switching power supplies (servers, data centers, communications equipment etc); electric vehicle (EV) charging stations; photovoltaic inverters; and uninterruptible power supplies (UPS).

Toshiba says that it will continue to expand its lineup of power devices and to enhance its production facilities.

See related items:

Toshiba launches 1200V and 1700V SiC MOSFET modules

Toshiba shipping 1200V SiC MOSFET

Tags: Toshiba SiC power MOSFET


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