AES Semigas


1 September 2022

OIPT’s silicon carbide plasma epi-prep alternative to CMP validated

After announcing its plasma alternative to chemical-mechanical planarization (CMP), Oxford Instruments Plasma Technology (OIPT) of Yatton, near Bristol, UK says that its non-contact plasma etch method of preparing silicon carbide substrates for epitaxy delivers comparable results to CMP but with lower operating expenditure (OPEX), higher device yield and a process window capable of supporting the transition to thinner wafers and therefore increasing wafers per boule.

The feasibility project, carried out at a tier 1 SiC semiconductor manufacturing fab using whole wafers, found that performance of the new plasma substrate preparation technique is already equivalent to CMP for epitaxy readiness.

“This validation outcome is a significant milestone in our goal of creating a more cost-effective and sustainable technique for preparing SiC substrates for epitaxy,” says Klaas Wisniewski, Plasma Technology’s strategic business development director. “Our plasma epi-prep technology is hugely promising and currently compares favourably to existing alternatives, but has the potential to exponentially increase substrate production and meet the growing demand for SiC substrates in high-growth markets,” he adds.

Oxford Instruments is formally launching its plasma epi-prep solution at the International Conference on Silicon Carbide and Related Materials (ICSCRM/ECSCRM) in Davos, Switzerland (11-16 September). In the conference technical sessions, it will present its latest whole-wafer epi and device results utilizing its patented dry etch process. There is also an opportunity to speak in person at the event to discuss implementing plasma epi-prep in high-volume manufacturing fabs.

To pre-arrange an in-person meeting, e-mail (VP of strategic production markets, OIPT).

See related items:

OIPT launches alternative to CMP for epi-prep of silicon carbide substrates

Tags: OIPT