AES Semigas


21 June 2022

Tagore launches GaAs pHEMT ultra-low-noise amplifiers and linear PA driver

Fabless semiconductor company Tagore Technology Inc – which was founded in January 2021 and has design centers in Arlington Heights, IL, USA and Kolkata, India developing gallium nitride-on-silicon (GaN-on-Si) technology for RF and power management applications – has launched ultra-low-noise amplifiers (LNA) and a companion linear power amplifier (PA) driver. Tunable from 100MHz to 5GHz and operating from a 2.7-5V supply, the family of devices is suitable for a broad range of applications including 5G infrastructure and high-performance Satellite Digital Audio Radio Service (SDARS).

The TL0374J and TL0375J are ultra-low noise figure LNAs utilizing pseudomorphic high-electron-mobility transistor (pHEMT) gallium arsenide (GaAs) process technology. The TL0374J is optimized for below 3GHz frequency bands and the TL0375J is optimized for above 3GHz frequency bands. Ultra-low noise figure LNAs offer a noise figure of 0.35dB and gain of 18dB with adjustable bias current through an external resistor. The TP0310K is a linear PA driver with gain of 17dB, OP1dB of 27dBm and OIP3 of 39dBm at 2GHz.

“The new ultra-low-noise amplifier and linear PA driver device deliver a very low NF, high linearity and good gain required for high-performance receivers such as 5G infrastructure and SDARS,” says chief sales & marketing officer Klaus Buehring. “Our applications team has developed custom tuning for a broad range of applications at 5V/60mA and 3V/30mA bias for common cellular band frequencies which can be adopted by our customers.”

The ultra-low-noise amplifiers are available in a 2x2 DFN package and the linear PA driver is available in a compact 3mm x 3mm QFN package. Samples and evaluation boards are available now for all devices.

See related items:

Tagore launches 10-100W second-generation RF switches

Tags: GaAs pHEMT


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