27 July 2022
Micross to distribute EPC Space’s rad-hard GaN power devices for space, aerospace and high-rel applications
EPC Space LLC of Haverhill, MA, USA says that Micross Components Inc of Orlando, FL, USA (a global provider of bare die and a mission-critical microelectronic components and services for high-reliability aerospace & defense, space, medical and industrial applications) has agreed to become an authorized distributor for its line of packaged radiation-hardened gallium nitride on silicon (GaN-on-Si) transistors and ICs, which are designed and qualified for satellite and other high-reliability applications.
Spanning a range of 40–300V, EPC Space offers a family of rad-hard enhancement-mode power transistors tht are said to demonstrate significant performance advantages over competing silicon-based rad-hard power MOSFETs. The firm’s technology produces GaN devices that are smaller, lighter and better performing, meaning that the devices have many times superior switching performance compared with silicon solutions.
To complement the EPC Space discrete products, Micross will also distribute EPC Space’s family of rad-hard enhancement-mode GaN drivers and power stages. These rad-hard GaN drivers are optimized to drive the rad-hard GaN transistors in critical space-borne systems and applications. The rad-hard power stages integrate a high-speed gate drive circuit with power switches to provide a complete monolithic power stage in a tiny footprint for a smaller, lighter solution.
The agreement combines the performance and reliability of EPC Space’s rad-hard GaN technology with Micross’ portfolio of high-reliability product lines along with their extensive relationship-driven network within the high-reliability community.
Critical space-borne applications that benefit from the performance improvements that EPC Space devices offer include power supplies for satellites and mission equipment, light detection and ranging (LiDAR) for robotics, autonomous navigation and rendezvous docking, motor drives for robotics and instrumentation, and ion thrusters for satellite orientation and positioning as well as interplanetary propulsion of low-mass robotic vehicles.
“The addition of EPC Space’s rad-hard gallium nitride-based power management products complements Micross’ expansive hi-rel product solutions portfolio and global expertise in providing mission-critical components and services for hi-reliability applications,” says Mark Zack, Micross Components’ senior VP of Die & Wafer Services.
“We are excited to bring our leading-edge high performance rad-hard GaN technology together with the expertise of Micross to reach wider and deeper into the space marketplace where these customers’ power applications require ‘state-of-the-art’ performance along with greater-power-density solutions,” says EPC Space’s CEO Bel Lazar.
EPC Space expands rad-hard GaN transistor family for critical space-borne and other high-rel environments
EPC signs Micross as global distributor of bare die