News: Microelectronics
22 December 2022
Mitsubishi Electric extends GaN HEMT range with 70W 12.75-13.25GHz low-Ku-band products
Tokyo-based Mitsubishi Electric Corp is adding two new 12.75-13.25GHz (low-Ku-band) 70W (48.3dBm) gallium nitride high-electron-mobility transistors (GaN HEMTs) to its lineup of GaN HEMTs for satellite communication (SATCOM) earth stations. On sale from 15 January 2023, two products — one for multi-carrier communications and the other for single-carrier communications — support increased data-transmission capacity and smaller earth stations even in the low-Ku-band.
Ku-band satellite communication systems are increasingly being deployed for emergency communications during natural disasters as well as for satellite news gathering (SNG) by TV broadcasters in rural areas where fiber and/or cable networks are not available. For SATCOM earth stations, existing mainstream systems use a 14GHz band, but in the near future they are expected to use the low-Ku (13GHz) band as well as the Ka (28GHz) band to address needs for increased data-transmission capacity.
Up to now, Mitsubishi Electric has offered a lineup of seven GaN HEMTs for multi-carrier and single-carrier SATCOM earth stations. The two new 70W GaN HEMTs now being introduced will also support emergency communications and SNG in the low-Ku-band.
