13 April 2022
Infineon extends CoolSiC M1H technology portfolio with 1200V SiC MOSFETs
Infineon Technologies AG of Munich, Germany has introduced a new CoolSiC technology: the CoolSiC MOSFET 1200V M1H. The silicon carbide (SiC) chip will be implemented in a widely extended portfolio using the Easy module family, along with discrete packages using .XT interconnect technology. The M1H chip offers high flexibility and is suitable for solar energy systems, such as inverters, that have to meet peak demand. The chip is also suitable for applications such as fast electric vehicle (EV) charging, energy storage systems and other industrial applications.
The latest advances of the CoolSiC base technology enable a significantly larger gate operation window that improves the on-resistance for a given die size. Simultaneously, the larger gate operation window provides a high robustness against driver- and layout-related voltage peaks at the gate, without any restrictions even at higher switching frequencies. Along with the M1H chip technology, related housings have also been adopted in technology and package variants to enable higher power densities and more options for design engineers to improve on application performance.
Easy modules enable higher power density
The M1H will be integrated into the Easy family to further improve the Easy 1B and 2B modules. In addition, a new product that enhances the Easy 3B module with the new 1200V CoolSiC MOSFET will also be launched. The roll-out of new chip sizes maximizes flexibility and ensures the broadest industrial portfolio. With the M1H chip, the on-resistance of the modules can be significantly improved, making the devices more reliable and efficient, says Infineon.
Picture: Infineon’s CoolSiC M1H 1200V SiC MOSFETs will be integrated into the Easy family to further improve the Easy 1B and 2B modules. Also, a new product that enhances the Easy 3B module will be launched.
Furthermore, with a maximum temporary junction temperature of 175°C, overload capability increases, enabling higher power density and coverage of failure events. Compared with its predecessor (the M1), the M1H has implemented a small adoption of the internal RG, enabling the switching behavior to be easily optimized. The dynamic behavior is maintained with the M1H chip.
Discrete packages with ultra-low on-resistances
In addition to the Easy module family, the CoolSiC MOSFET 1200V M1H portfolio includes new ultra-low on-resistances 7mΩ, 14mΩ and 20mΩ in the TO247-3 and TO247-4 discrete packages. Infineon says that the new devices are easy to design-in, especially due to the gate voltage overshoots and undershoots with the new maximum gate-source voltage down to -10V, and come with avalanche and short-circuit capability specifications.
Picture: Infineon’s CoolSiC MOSFET 1200V M1H portfolio includes TO247-3 and TO247-4 discrete packages with new ultra-low on-resistances of 7mΩ, 14mΩ and 20mΩ.
Infineon’s .XT interconnection technology, previously introduced in the D2PAK-7L package, is now also implemented in a TO-footprint. The thermal dissipation capabilities are enhanced by more than 30% compared with a standard interconnection. As a result, such thermal benefit can be used to increase the output power by up to 15%. Alternatively it can be used to increase the switching frequency to further reduce the passive components in, for example, EV charging, energy storage or photovoltaic systems for enhanced power density and reduced system cost. Without changing the system operating conditions, the .XT technology will lower the SiC MOSFET junction temperature, significantly increasing the system lifetime and power cycling capabilities (a key requirement in applications such as servo drives).
The module and discrete variants can be ordered now.