AES Semigas


8 November 2021

Nexperia expands wide-bandgap range by entering high-power silicon carbide diode market

Nexperia BV of Nijmegen, Netherlands - which manufactures diodes, bipolar transistors, ESD protection devices, MOSFETs, gallium nitride (GaN) field-effect transistors (FETs) and analog & logic ICs - has announced its entry into the high-power silicon carbide (SiC) diode market with the introduction of 650V, 10A SiC Schottky diodes. This is a strategic move for Nexperia, which already supplies power gallium nitride (GaN) FETs, to expand its range of high-voltage wide-bandgap semiconductor devices.

Nexperia’s first SiC Schottky diode is an industrial-grade device with 650V repetitive peak reverse voltage (VRRM) and 10A continuous forward current (IF) designed to combine ultra-high performance and high efficiency with low energy loss in power conversion applications. Providing the added benefit of a high-voltage compliant real 2-pin (R2P) package with higher creepage distance, it is available in a choice of surface-mount (DPAK R2P and D2PAK R2P) or through-hole (TO-220-2, TO-247-2) devices. Engineering samples are available on request, with a full product release planned for second-quarter 2022. Nexperia plans to continuously increase its portfolio of SiC diodes, leading to a total of 72 products operating at voltage levels of 650V and 1200V and with currents in the range 6-20A.

“Wide-bandgap semiconductors like gallium nitride and silicon carbide are now well placed to meet the stringent needs of high-volume applications, bringing the promise of higher efficiency, greater power density, lower system cost and reduced operating costs for original equipment manufacturers,” says Mark Roeloffzen, general manager of the firm’s Bipolar Discretes Group. “Nexperia’s diverse portfolio of SiC diodes will bring greater choice and availability to this market,” he adds.

The new SiC Schottky diodes initially target industrial and consumer applications including: switch-mode power supplies (SMPS); AC-DC and DC-DC converters; battery charging infrastructure; uninterruptible power supplies (UPS); and photovoltaic inverters.

Nexperia also plans to release automotive-grade devices for use in-vehicle electrification applications such as on-board chargers (OBC), inverters, and high-voltage DC-DC converters.

The new PSC1065H (-J/-K/-L) is the first in a portfolio of SiC Schottky diodes that Nexperia is developing to address the automotive and industrial markets.

See related items:

Nexperia makes available second-generation 650V power GaN FET device family

Nexperia to expand production and increase R&D spend

Nexperia enters GaN FET market

Tags: SiC Schottky barrier diodes


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