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1 October 2019

WIN offers sample kits for NP15-00 GaN-on-SiC 0.15μm-gate technology

WIN Semiconductors Corp of Taoyuan City, Taiwan – the largest pure-play compound semiconductor wafer foundry – has developed sample kits for its gallium nitride (GaN)-based 0.15μm-gate technology. The NP15-00 millimeter-wave (mmWave) compound semiconductor technology is suitable for transmit power amplifiers used in 5G mmWave radio access networks, satellite communications and radar systems.

Supporting full monolithic microwave integrated circuits (MMICs), the NP15-00 platform allows customers to develop compact, linear or saturated high-power amplifiers up to 35GHz. In the 29GHz band, NP15-00 technology offers saturated output power of 3W/mm with 13dB linear gain and greater than 50% efficiency without harmonic tuning.

For mmWave active arrays, the higher transmit power and efficiency from the NP15-00 platform affords designers greater flexibility to optimize antenna count, power amplifier size and total array power. Depending on the application, mmWave radio access network (RAN) infrastructure will leverage access points of various sizes, shapes and power levels, and a broad trade-space is crucial to optimize the performance and economics of mmWave active antenna systems, says WIN.

The NP15-00 gallium nitride technology employs a source-coupled field plate for improved breakdown voltage, and operates at a drain bias of 20V. This technology is fabricated on 100mm silicon carbide substrates with through-wafer vias for low inductance grounding.

WIN is celebrating its 20th anniversary and showcasing its compound semiconductor RF and mm-Wave solutions in booth 1220 at European Microwave Week (EuMW 2019) in Paris, France (29 September – 4 October).

See related items:

WIN releases 0.15μm GaN process for high-power mmWave PA applications and 5G infrastructure

Tags: WIN Semiconductors

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