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7 November 2019

GTAT achieves ISO-9001:2015 Certification

GT Advanced Technologies (GTAT) of Hudson, NH, USA - which produces silicon carbide (SiC) and sapphire material and crystal growth equipment for the solar, power electronics and optoelectronics industries) - has achieved ISO-9001:2015 certification through auditors TÜV Rheinland of North America, a third-party testing, inspection and certification company.

“Obtaining ISO certification is one of many milestones that we have been able to achieve very rapidly,” says GTAT’s CEO Greg Knight. “In less than a year, we equipped our facility, reached volume production, and achieved ISO certification.”

Silicon carbide is the preferred substrate material for power electronics semiconductors used in applications such as electric vehicles (EVs). GTAT’s CrystX silicon carbide is sold to industry partners who produce sliced and polished wafers.

GTAT says that its rapid growth as an ISO-certified producer of silicon carbide reflects accelerating demand from power electronics semiconductor makers. “Our focus has been to rapidly scale production and achieve the necessary quality certifications so that growing markets can take advantage of what we produce,” says Knight. In August, GTAT signed a long-term supply agreement with Taiwan-based GlobalWafers Co (GWC) for its CrystX silicon carbide.

See related items:

GTAT and GlobalWafers sign multi-year deal to develop source of SiC wafer supply

GTAT introduces 150mm bulk SiC crystal material

GTAT opens new silicon carbide manufacturing plant, corporate HQ and R&D center

GTAT launches SiC boule growth furnace addressing emerging demand for 6” wafers

Tags: GT SiC

Visit: www.gtat.com

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