ARM Purification

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20 March 2019

ROHM adds automotive-grade SiC MOSFETs

Power semiconductor maker ROHM of Kyoto, Japan has announced the addition of 10 new automotive-grade silicon carbide (SiC) metal-oxide-semiconductor field-effect transistors (MOSFETs). The SCT3xxxxxHR series allows ROHM to offer what it claims is the industry’s largest lineup of AEC-Q101-qualified SiC MOSFETs that provide the high reliability necessary for automotive on-board chargers and DC/DC converters.

In recent years, in response to growing environmental awareness and rising fuel costs, an increasing number of automotive makers have been offering electric vehicles (EVs). However, although EVs are becoming more widespread, their relatively short driving range remains problematic. To improve driving distance, batteries are trending towards larger battery capacities with shorter charging times. This, in turn, demands high-power and high-efficiency on-board chargers such as 11kW and 22kW, leading to the increased adoption of SiC MOSFETs. In addition, higher-voltage batteries (800V) require power devices featuring low loss and higher withstand voltages.

To meet these needs, ROHM has added 10 new models to its lineup of AEC-Q101-qualified MOSFETs that utilize a trench gate structure. The result is the industry’s largest portfolio, available in both 650V and 1200V variants. ROHM says that also, going forward, it aims to further improve quality and strengthen its lineup to increase device performance, reduce power consumption, and achieve greater miniaturization.

See related items:

Rohm starts mass production of first trench-type SiC MOSFET

Tags: Rohm SiC MOSFET

Visit:  www.rohm.com/web/global/sic-mosfet

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