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12 March 2019

GaN Systems unveils highest-current GaN power transistors

GaN Systems Inc of Ottawa, Ontario, Canada (a fabless developer of gallium nitride-based power switching semiconductors for power conversion and control applications) has launched what is claimed to be the industry’s highest-current 650V GaN enhancement-mode high-electron-mobility transistors (E-HEMTs) with the addition of the GS-065-150-1-D (150A, 650V) and the GS-065-080-1-D (80A, 650V) to its line of GaN power transistors. In particular, the 150A, 650V transistor is claimed to be unmatched in both current (80A at 22mΩ) and resistance (50A at 18mΩ) compared with other GaN power transistors on the market.

The products are said to meet existing high-power system requirements to achieve higher operating currents, higher efficiency, and smaller size and weight. Developed specifically for automotive, industrial and renewable energy industries, the transistors feature the highest-current GaN in production. Applications include:

  • traction inverters (75-150kW) and onboard chargers (6.6-22kW range) in electric vehicles;
  • energy storage systems and solar/PV inverters up to 50kW+; and
  • industrial motor drives and controllers up to 10kW+.

The products are sold in a die form factor, targeted at various power module topologies. Customers use the die in modules to create half-bridge, full-bridge and six-pack configurations to create optimized high-power designs with integrated gate drive circuits to differentiate their end-customer solutions.

“The increasing complexity and performance demands of power systems have created the need for higher-performance GaN solutions,” says CEO Jim Witham. “Our family of innovative and unprecedented transistors are growing to meet the overwhelming requirements from our customers and partners for high-performance GaN-based technology,” he adds. “Module companies can now offer the industry’s best GaN E-HEMTs in high-power modules, allowing OEMs and tier-1 suppliers to focus on implementing highly efficient power electronics using GaN with ease and confidence.”

GaN Systems is displaying its family of GaN transistors in booth 553 at the Applied Power Electronics Conference (APEC 2019) in Anaheim, CA, USA (17-21 March).

Tags: GaN Systems E-mode GaN FETs Power electronics

Visit:  www.apec-conf.org

Visit:  www.gansystems.com

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