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4 June 2019

WIN releases 0.15μm GaN process for high-power mmWave PA applications and 5G infrastructure

WIN Semiconductors Corp of Taoyuan City, Taiwan – the largest pure-play compound semiconductor wafer foundry – has expanded its gallium nitride (GaN) portfolio with the commercial release of NP15-00, a 0.15μm-gate technology that supports emerging mmWave PA applications including radar, satellite communications and 5G massive MIMO infrastructure. NP15-00 supports full MMICs enabling customers to design compact, linear or saturated high-power amplifiers through 35GHz.

NP15-00 GaN employs a source-coupled field plate for improved breakdown voltage, and operates at a drain bias of 20V. This technology is fabricated on 100mm silicon carbide (SiC) substrates with through-wafer vias for low-inductance grounding. In the 29GHz band, NP15-00 offers saturated output power of 3W/mm with 13dB linear gain and greater than 50% efficiency without harmonic tuning.

“The release of NP15 expands WIN’s portfolio of mmWave compound semiconductor technologies for transmit power amplifiers used in 5G mmWave radio access networks (RANs), satellite communications and radar systems,” says senior VP David Danzilio. “For mmWave active arrays, the higher transmit power and efficiency from NP15 affords designers greater flexibility to optimize antenna count, PA size and total array power,” he adds. “Depending on where deployed, mmWave RAN infrastructure will leverage access points of various sizes, shapes and power levels, and a broad trade-space is crucial to optimize the performance and economics of mmWave active antenna systems.”

NP15-00 sample kits are available and can be obtained by contacting WIN’s regional sales managers.
WIN is showcasing its compound semiconductor RF and mmWave solutions in booth 772 at the IEEE’s International Microwave Symposium (IMS 2019) in Boston, MA, USA (2–7 June).

See related items:

WIN enhances 0.25µm GaN power process

Tags: WIN Semiconductors

Visit: www.ims-ieee.org

Visit: www.winfoundry.com

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