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25 June 2019

UnitedSiC adds 4-lead Kelvin device to UF3C FAST FET series

Silicon carbide (SiC) power semiconductor maker United Silicon Carbide Inc (USCi) of Monmouth Junction, NJ, USA has further expanded its UF3C FAST series by adding the 1200V high-performance SiC field-effect transistor (FET) device in a TO-247-4L 4-leaded Kelvin Sense discrete package option. The UF3C120150K4S offers a typical on-resistance (RDS(on)) of 150mΩ, bringing the total number of 4-leaded FAST Series devices up to six and extending the on-resistance range of the entire series from 30mΩ all the way up to 150mΩ.

With a maximum operating temperature of 175°C, the UF3C120150K4S offers what is claimed to be excellent reverse recovery, low gate charge and low intrinsic capacitance. The ESD-protected, HBM class 2 TO-247-4L package offers faster switching and much cleaner gate waveforms compared with a standard 3-leaded TO-247. The 4-pin Kelvin package avoids gate ringing and false triggering which would normally require switching speeds to be limited to manage the large common source inductance of 3-leaded packages. The new device is suitable for electric vehicle (EV) charging, photovoltaic inverters, switch mode power supplies (SMPS), power factor correction (PFC) modules, motor drives and induction heating.

UnitedSiC’s UF3C FAST SiC series (launched last November), which now totals 13 devices, is available in TO-247-3L and TO-247-4L packages with 1200V and 650V options. The range offers very fast-switching, high-power devices in a package capable of high power dissipation based on its efficient cascode configuration. The 4-terminal Kelvin package offers easy screw or clamp mounting with very low junction-to-case thermal resistance, taking advantage of the high-junction-temperature capabilities of SiC.

Unique to UnitedSiC’s entire UJ3C and UF3C SiC FET portfolio is its true ‘drop-in replacement’ functionality. Designers can significantly enhance system performance, without the need to change gate drive voltage, by replacing their existing silicon IGBTs, silicon FETs, SiC MOSFETs or silicon superjunction devices with UnitedSiC’s FETs.

The UF3C120150K4S is priced at $6.14 in 1000-unit quantities. Stock is available at Mouser and other local distributors.

See related items:

UnitedSiC launches UF3C FAST silicon carbide FET series

Tags: SiC JFETs SiC power devices

Visit: www.mouser.com/usci

Visit: https://unitedsic.com/cascodes

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