Integra Technologies wins US Air Force contract to accelerate thermally enhanced GaN/SiC readiness

Integra Technologies Inc (ITI) of El Segundo, CA, USA (which makes high-power RF and microwave transistors and power amplifier modules for mission-critical applications including radar, electronic warfare and advanced communications systems) has been awarded a two-year contract by the US Air Force to accelerate technology and manufacturing readiness of its patented Thermally Enhanced GaN/SiC technology.

Integra says that its GaN/SiC technology is suitable for high-efficiency, solid-state RF power applications including high-power radar systems requiring improved performance, increased range and reduced operating costs.

The firm has developed its Thermally Enhanced GaN/SiC to deliver superior power and efficiency while operating at lower temperatures, which is a key enabler of next-generation high-performance radar platforms. Integra is leveraging its domestic R&D and manufacturing platform to optimize the GaN epitaxial wafer, device design and package design. Additionally, the US Air Force contract will enable robust qualification of Integra’s Thermally Enhanced GaN/SiC for production.

“Through this effort, we have the opportunity to commercialize our leap-ahead GaN/SiC technology to meet the high-efficiency performance and production readiness requirements of the US Department of Defense,” says president & CEO Suja Ramnath.

Tags: Integra GaN-on-SiC HEMT

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