Temescal

Semigas

CLICK HERE: free registration for Semiconductor Today and Semiconductor Today ASIACLICK HERE: free registration for Semiconductor Today and Semiconductor Today ASIA

Join our LinkedIn group!

Follow ST on Twitter

IQE

12 February 2019

MIT’s Christine Wang elected to US National Academy of Engineering

Massachusetts Institute of Technology (MIT) says that six of its researchers are among the 86 new members and 18 foreign associates elected to the US National Academy of Engineering (NAE).

Academy membership honors those who have made outstanding contributions to “engineering research, practice or education including, where appropriate, significant contributions to the engineering literature,” and to “the pioneering of new and developing fields of technology, making major advancements in traditional fields of engineering, or developing/implementing innovative approaches to engineering education.”

The six new NAE members at MIT include Dr Christine Wang, a senior staff scientist in the Laser Technology and Applications Group at MIT’s Lincoln Laboratory, for contributions to epitaxial crystal growth of III-V compound semiconductors and the design of organometallic vapor-phase epitaxy (OMVPE) reactors.

Wang (who holds SB, MS and PhD degrees in materials science and engineering from MIT) is pursuing research on the optimization of III-V materials for optoelectronic devices. According to MIT, she pioneered the concepts used in the design of high-performance OMVPE reactors; led the investigation and use of non-conventional chemical compounds to enable epitaxial growth of high-quality metastable antimonide-based III-Vs; and advanced the state of the art in the epitaxial growth of gallium arsenide-, gallium antimonide- and indium phosphide-based optoelectronic devices, including diode lasers, quantum cascade lasers (QCLs) and thermophotovoltaic cells. Current research is focused on the development of high-power, continuous-wave QCLs emitting in the long-wave infrared wavelength region.

Wang is a member of the Executive Committee for American Association of Crystal Growth, the International Advisory Committee for International Conferences on Metalorganic Vapor Phase Epitaxy, and the Electronic Materials Conference Committee. She is also a Fellow of the National Academy of Inventors. She will serve as program co-chair for the next International Conference on Crystal Growth and Epitaxy in 2019.

Wang previously received the 2017 American Association for Crystal Growth Award for her contributions to epitaxial crystal growth of III-Vs and the design of high-performance OMVPE reactors.

Including this year’s inductees, 138 members of the NAE are current or retired members of the MIT faculty and staff, or members of the MIT Corporation.

Tags:  MOCVD

Visit:  www.ll.mit.edu

Share/Save/Bookmark
See Latest IssueRSS Feed

EVG