Temescal

ARM Purification

CLICK HERE: free registration for Semiconductor Today and Semiconductor Today ASIACLICK HERE: free registration for Semiconductor Today and Semiconductor Today ASIA

Join our LinkedIn group!

Follow ST on Twitter

IQE

28 February 2019

Empower launches 600-6000MHz 30W GaN module

Empower RF Systems Inc of Inglewood, CA and Holbrook, NY, USA (which produces RF and microwave power amplifiers for defense, commercial and industrial applications) has launched model 1219, a single-band solid-state gallium nitride (GaN) module delivering a minimum 30W (40W typical) across its entire 0.6-6GHz band. The firm claims to be the first amplifier manufacturer to cover this bandwidth with an affordable commercial off-the-shelf (COTS) product.

The 1219 utilizes 50V gallium nitride on silicon carbide (GaN on SiC) transistors which have lower leakage currents and higher thermal conductivity and represent a more reliable technology than gallium nitride on silicon (GaN on Si). As an added benefit, 50V devices require about half the input current as their 28V counterparts, which reduces power supply cost, size and weight.

The compact class-AB amplifier is suitable for broadband mobile communications, jamming and product test applications. Control and monitoring includes both discrete and digital RS485 interfaces for gain adjustment, temperature monitoring, input current monitoring, reset/PA blanking, and alarm.

The module comes with the mating connector/pigtail, and optional control software is available to optimize module performance out of the box. Heat sink and fan assembly are available.

Tags:  GaN RF

Visit:  www.empowerrf.com

Share/Save/Bookmark
See Latest IssueRSS Feed

EVG