IGaN launches MPW shuttle program for GaN-on-Si transistors

Singapore-based IGSS GaN Pte Ltd (IGaN) – which provides proprietary gallium nitride on silicon (GaN-on-Si) epitaxial wafer fabrication services for both power and radio frequency (RF) devices – has announced its cost-effective and quick prototyping multi-project wafer (MPW) shuttle program, as it seeks to advance volume production in 200mm-diameter silicon substrates.

Enabling customers to tape-out their designs for rapid prototyping, the MPW offers cost reduction through the expense sharing of masks and wafers with other MPW shuttle program partners. The service leverages the shift in demand towards GaN devices capable of improving power efficiency conversion up to 50%.

“The industry is ripe for a transition to GaN devices, with various infrastructure coming together making it conducive to new technologies,” believes president George Wong. “Today, challenges around reliability have been primarily addressed, paving way for a wider adoption of GaN that is spurred by the increasingly cost-friendly manufacturing capabilities,” he adds. “This is where IGaN completes the supply chain.”

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IGaN and SilTerra demo D-MISHEMT using 200mm GaN-on-Si wafer on foundry CMOS process

Tags: GaN-on-Si

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