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3 September 2018

TowerJazz addressing emerging 5G and mmWave markets with new SiGe and RF SOI technologies

© Semiconductor Today Magazine / Juno PublishiPicture: Disco’s DAL7440 KABRA laser saw.

In booth #411 at European Microwave Week (EuMW 2018) in Madrid, Spain (25-27 September), specialty foundry TowerJazz (which has fabrication plants at Tower Semiconductor Ltd in Migdal Haemek, Israel, and at its US subsidiaries Jazz Semiconductor Inc in Newport Beach, CA and TowerJazz Texas Inc in San Antonio, TX, and at TowerJazz Japan Ltd) is showcasing its RF silicon process capability including silicon germanium (SiGe) and RF silicon-on-insulator (SOI) technologies, addressing the emerging 5G and millimeter-wave (mmWave) markets and focusing on high-data-rate mobile and automotive applications.

Specifically, TowerJazz is presenting its high-volume SiGe BiCMOS technology for 5G mobile transmit-receive chips with greater than 12Gbps data rates, with record performance in the 28GHz band (a more than ten-fold improvement in data rate versus 4G LTE, and meeting many other technical specification requirements of the emerging 5G standard).

The firm is also highlighting its 5G RF SOI technology, which includes its newest 65nm process ramping on 300mm wafers with what is claimed to be best-in-class low-noise amplifier (LNA) and switch performance to address integration in the front-end-module. The process can reduce losses in an RF switch, improving battery life and boosting data rates in handsets and Internet of Things (IoT) terminals.

Also, at the accompanying 48th European Microwave Conference (EuMC 2018), on 25 September (11:00am until 12 noon) TowerJazz is participating in a panel session to discuss RF semiconductor solutions for 5G systems.

See related items:

TowerJazz announces RF SOI 65nm ramp in 300mm Japan fab

Tags: TowerJazz SiGe SOI

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Visit: www.towerjazz.com

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