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18 September 2018

Teledyne e2v HiRel launches highest-voltage 650V/60A bottom-side-cooled GaN FET

© Semiconductor Today Magazine / Juno PublishiPicture: Disco’s DAL7440 KABRA laser saw.

Teledyne e2v HiRel Electronics of Milpitas, CA, USA (a a business unit of the Teledyne Defense Electronics Group that provides solutions, sub-systems and components to the space, transportation, defense and industrial markets) has launched a 650V/60A gallium nitride (GaN) field-effect transistor (FET) device dedicated to demanding high-reliability (HiRel) applications. The new 650V/60A enhancement-mode power transistor is claimed to be the highest-voltage GaN FET on the market.

Fabricated in a GaN-on-silicon process, the TDG650E60 is packaged in GaN System’s GaNPX package, which enables very low inductance and thermal resistance in a small 11mm x 9mm outline. The package is bottom-side cooled to offer very low junction-to-case thermal resistance. GaN System’s patented ‘Island’ technology is key to enabling high voltage, current and efficiency.

The plastic-packaged GaN FET is the first 650V product released from the new Teledyne e2v HiRel Enhanced Product (EP) series that addresses the concerns of applications where ceramic packages are not required. In such applications, the cost and earliest availability of newer technologies are the highest priorities for design engineers.

Teledyne e2v HiRel GaN screening, baseline control and a 10 year longevity support program will give reliability and availability assurance for demanding military, space, avionics, and related HiRel applications, says the firm.

“Releasing a HiRel 650V GaN FET is an industry milestone, giving design engineers more margin in the most demanding space and military COTS applications,” says Mont Taylor, VP of business development. “The non-ceramic package will allow customers to benefit from the low-weight and efficient GaNPX package for the best performance in these stringent applications.”

For demanding high-power applications, GaN power FET technology is the newest, most efficient solution, says the firm. The new 650V FET builds on this by offering additional benefits, including:

  • very high switching frequency;
  • SWaP (the device is a offered in a very small package);
  • high voltage and high current;
  • high energy density; and
  • modular flexibility (the parts can be used in parallel to increase current).

Teledyne HiRel Electronics is able to offer samples of the new device available for review. Shipping will begin in November.

See related items:

Teledyne e2v, pSemi and GaN Systems unveil fastest hi-rel GaN power solution, featuring GaN FET and half-bridge driver

e2v to supply GaN Systems' 100V and 650V hi-rel GaN transistors to global aerospace & defense industry

Tags: GaN Systems E-mode GaN FETs Power electronics

Visit: www.gansystems.com

Visit: www.e2v.com/products/semiconductors/power-solutions

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