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13 September 2018

GaN Systems showcasing GaN power transistor products and design tools at ECCE 2018

© Semiconductor Today Magazine / Juno PublishiPicture: Disco’s DAL7440 KABRA laser saw.

In booth #312 at the 10th annual IEEE Energy Conversion Congress & Expo (ECCE 2018) in Portland, OR, USA (23-27 September), GaN Systems Inc of Ottawa, Ontario, Canada (a fabless developer of gallium nitride-based power switching semiconductors for power conversion and control applications) is exhibiting the latest products and design tools that extend the capabilities of its GaN power transistors. These include the 100V, 120A, 5mΩ GaN E-HEMT device (claimed to be the highest-current and most power-efficient 100V GaN power transistor); 120A, 650V, 12mΩ GaN E-HEMT (said to be the world’s highest-current-rated GaN power transistor); and wireless power amplifiers (100W and 300W) for wireless charging in high-power consumer, industrial and transport applications. In addition, reference designs and evaluation kits that ease the design process will be shown.

The firm is also providing a wide range of customer and application demonstrations focused on industrial, automotive, and renewable energy applications.

In the poster session of the conference, GaN Systems experts are presenting two posters providing engineers best practices in taking advantage of GaN power transistors in designing improved and innovative power systems:

  • ‘An Ultrafast Discrete Short-Circuit/Over-Current Protection Circuit for GaN HEMTs’ by Ruoyu Hou, Juncheng Lu and Di Chen; and
  • ‘Paralleled GaN HEMTs Loss Distribution Analysis for High-power Applications’ by Juncheng(Lu) Lu, Ruoyu Hou and Di Chen.

Tags: GaN Systems E-mode GaN FETs Power electronics

Visit: www.ieee-ecce.org/2018

Visit: www.gansystems.com

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