Integra offering GaN-on-SiC transistor evaluation kits for verifying performance in RF systems

Integra Technologies Inc (ITI) of El Segundo, CA, USA (which makes high-power RF and microwave transistors and power amplifier modules) is offering gallium nitride on silicon carbide (GaN-on-SiC) high-electron-mobility transistor (HEMT) evaluation kits to designers evaluating the technology for their high-power amplifier designs.

Each kit is customized to include a designer’s transistor model of choice (partially or fully matched options are available) and includes a test fixture with one transistor fully mounted and tested, and a second spare device. Full RF test results, as tested under key conditions by the Integra technical support team, are also provided as a reference guideline.

The kits can be borrowed free for 30 days and extended if needed or be purchased to own.

The Application Note ‘Handling and Adjustment of Integra Technologies GaN-on-SiC HEMT Evaluation Kits’ can be downloaded from Integra’s website.

Tags: Integra GaN-on-SiC HEMT

Visit: www.integratech.com