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31 October 2018

Exagan presenting at electronica 2018

© Semiconductor Today Magazine / Juno PublishiPicture: Disco’s DAL7440 KABRA laser saw.

At the electronica 2018 event in Munich, Germany (12-16 November), gallium nitride technology start-up Exagan of Grenoble and Toulouse, France (founded in 2014 with support from CEA-Leti and Soitec) is demonstrating new high- and low-power solutions based on its G-FET family of power transistors and its G-DRIVE series of intelligent and fast-switching solutions featuring an integrated driver and transistor in a single package (launched in June). Showcased on stand #110 (hall C3), the new applications leverage easy-to-design-in GaN technology to boost power efficiency in a diverse range of applications including servers and USB chargers.

Also, during the electronica Automotive Conference at the ICM – Internationales Congress Center München, on 12 November (12-12.30) president & CEO Frédéric Dupont is giving a presentation ‘From Evolution to Revolution: Disrupting Automotive Power Conversion with GaN’ describing how GaN enables significantly smaller, lighter and more cost-effective system-level power solutions and why this technology is playing a major role in the automotive industry’s transition to more electric vehicles (EVs).

See related items:

Exagan launches G-FET power transistors and G-DRIVE intelligent fast-switching products for consumer, industrial and automotive applications

Exagan raises €5.7m to produce GaN-on-Si power-switching devices on 200mm wafers

X-FAB and Exagan to co-develop high-volume production of high-speed GaN-on-Si power switching devices on 200mm wafers

Tags: GaN-on-Si GaN switching device on silicon

Visit: www.exagan.com

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