UnitedSiC launches UF3C FAST silicon carbide FET series

Silicon carbide (SiC) power semiconductor maker United Silicon Carbide Inc (USCi) of Monmouth Junction, NJ, USA has launched its UF3C FAST series of 650V and 1200V high-performance silicon carbide FETs in a standard TO-247-3L package – the UF3C120040K3S (1200V/35mΩ), UF3C065030K3S (650V/30mΩ) and UF3C065040K3S (650V/42mΩ) – offering increased switching speeds and higher efficiency levels than the existing UJC3 Series.

Based on the firm’s proprietary cascode configuration, the new series provides higher switching speeds while at the same time offering a ‘drop-in’ replacement solution for most TO-247-3L IGBT, Si-MOSFET and SiC-MOSFET parts, so upgrades for greater performance and efficiency can be affected without requiring changes to the existing gate drive circuitry. Turn-on losses can be reduced based on a 50% reduction in Qrr. For high current use, a small, low-cost RC snubber is required, which also simplifies EMI design.

Applications suitable for use with the UF3C FAST series include the full range of hard switched circuits such as active rectifiers and totem-pole PFC stages, commonly used in electric vehicle (EV) charging, telecom rectifiers and server supplies.

Built on UnitedSiC’s Gen-3 SiC transistor technology, the UF3C FAST series integrates a faster SiC JFET with a custom-designed Si-MOSFET to produce a combination of normally-OFF operation, a high-performance body diode and easy gate drive of the MOSFET. Compared with other wide-bandgap technologies, the SiC cascode devices support standard 12V gate drive, and have assured avalanche ratings (100% production-tested).

“UnitedSiC’s new FAST SiC FET range is simple to use and offer a great cost-performance option,” claims Anup Bhalla, VP engineering. “The range offers design engineers the opportunity to extract even higher levels of efficiency from high-power designs.”

Prices range from $14.50 for the UF3C065040K3S to $24.50 for the UF3C120040K3S in 1000-unit quantities. Stock is available at Mouser and other local distributors.

Data sheets and a SiC FET user guide are available, including recommended RC snubber values tested by UnitedSiC for optimal performance.

Tags: SiC JFETs SiC power devices

Visit: www.mouser.com/usci

Visit: https://unitedsic.com/cascodes