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31 May 2018

Microsemi announces low-inductance SP6LI package for SiC MOSFETs

© Semiconductor Today Magazine / Juno PublishiPicture: Disco’s DAL7440 KABRA laser saw.

Microsemi Corp of Aliso Viejo, CA, USA (which makes chips for aerospace & defense, communications, data-center and industrial markets) has announced its extremely low-inductance package dedicated to high-current, low specific on-resistance (RDSon) silicon carbide (SiC) MOSFET power modules.

Developed specifically for the SP6LI product family, the new package is designed to offer 2.9nH stray inductance suitable for SiC MOSFET technology and enable high current, high switching frequency and high efficiency.

The SP6LI power modules in the new packaging, along with other SiC power modules from Microsemi’s existing product family, are being showcased in booth 318 (hall 6) at PCIM Europe 2018 (Power Conversion and Intelligent Motion) in Nuremberg, Germany (5-7 June).

Microsemi says that, as it continues to expand its SiC solutions, it has become one of the few suppliers providing a range of Si/SiC power discrete and module solutions to the market. With what is claimed to be one of the lowest stray inductance packages in the industry dedicated to high-current SiC MOSFET power modules, the SP6LI product family features five standard modules, offering phase leg topology ranking from 1200V, 210A to 586A at a case temperature (Tc) of 80°C to 1700V, 207A at a Tc of 80°C.

The SP6LI power modules feature a phase leg topology made of SiC power MOSFETs and SiC Schottky diodes, and offer an extremely low RDSon down to 2.1mΩ per switch and an internal thermistor for temperature monitoring. They also offer screw-on terminals for both signal and power connections, as well as isolated and high-thermal-conductivity substrates (aluminium nitride as a standard and silicon nitride as an option) for improved thermal performance. In addition, the standard copper base-plate can be replaced as an option with aluminium silicon carbide (AlSiC) material, enabling higher power-cycling capabilities.

Other key features include:

  • an optimized layout for multi-SiC MOSFET and diode chips assembly in phase leg topology;
  • a symmetrical design to accept up to 12 SiC MOSFET chips in parallel per switch;
  • each die in parallel with its own gate series resistor for homogenous current balancing;
  • high current capability up to 600A at very fast switching frequency; and
  • optional mix of assembly materials to better address different markets and applications.

Offering higher power density and a compact form factor, the new package enables fewer modules in parallel to achieve complete systems, helping to further downsize equipment.

The SP6LI power modules can be used in switch mode power supplies (SMPS) and motor control in industrial, automotive, medical, aerospace and defense applications. Examples include electric vehicle/hybrid electric vehicle (EV/HEV) powertrain and kinetic energy recovery systems (KERS); aircraft actuation systems; power generation systems; switched mode power supplies for applications including induction heating, medical power supplies and electrification of trains; photovoltaic (PV)/solar/wind converters and uninterrupted power supply (UPS).

“Our extremely low stray inductance standard SP6LI package is ideal for improving the performance of SiC MOSFETs for high-switching, high-current and high-efficiency applications, offering a smaller-sized power systems solution which can help customers significantly reduce their equipment needs,” says Leon Gross, VP & business unit manager for Microsemi’s Discrete and Power Management business unit. “These superior switching characteristics of our low-inductance package enable customers to develop higher-performance and highly reliable systems to help differentiate them from the competition.”

According to market research firm Technavio, the SiC market for semiconductor applications is expected to grow at a compound annual growth rate (CAGR) of more than 18% to nearly $540.5m by 2021. In particular, IHS Markit’s research forecasts that by 2025 SiC MOSFETs will generate revenue exceeding $300m - almost reaching the levels of SiC Schottky diodes - to become the second best-selling SiC discrete power device type.

During the PCIM Europe exhibition, Microsemi’s product experts will be in booth 318 (hall 6) to showcase its next-generation SiC solutions, including its new low-inductance SiC-based SP6LI power module. In addition, the firm’s recently announced next-generation 1200V, 40mΩ SiC MOSFET device and 1200V, 10/30/50A SiC diode product will be showcased, along with a power factor correction (PFC) reference design.

The SP6LI product family is sampling now with the low-inductance package.

See related items:

Microsemi samples new 1200V SiC MOSFETs and SiC SBDs for industrial and automotive markets

Microsemi launches 1200V SiC MOSFETs for high-voltage industrial applications

Tags: Microsemi SiC MOSFET SiC Schottky barrier diodes

Visit: www.mesago.de/en/PCIM/main.htm

Visit: www.microsemi.com/product-directory/silicon-carbide-sic/

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