24 May 2018

EPC giving technical presentations on GaN technology and applications at PCIM Europe

© Semiconductor Today Magazine / Juno PublishiPicture: Disco’s DAL7440 KABRA laser saw.

In hall 7 (stand 539) at PCIM Europe 2018 (Power Conversion and Intelligent Motion) in Nuremberg, Germany (5–7 June), Efficient Power Conversion Corp (EPC) of El Segundo, CA, USA – which makes enhancement-mode gallium nitride on silicon (eGaN) power field-effect transistors (FETs) for power management applications – is exhibiting its latest eGaN FETs and ICs in customers’ end-products enabled by eGaN technology.

EPC will be giving live demonstrations of eGaN devices in several applications including: an eGaN-based 48V–12V DC–DC power converter for advanced computing and automotive applications; a high-power nanosecond pulsed eGaN laser driver for LiDAR used in autonomous vehicles; a table that can transfer up to 60W wirelessly; and a precision motor drive using a high-speed, highly efficient GaN-based module.

In addition, EPC is giving five technical presentations on GaN technology and applications:

• Session: 5 June (15:15–17:30) – ‘GaN-Based Multilevel Intermediate Bus Converter for 48 V Server Applications’ by David Reusch;
• Session: 5 June (15:15–17:30) – ‘High Performance Thermal Solution for High Power GaN FET Based Power Converters’ by Michael de Rooij and David Reusch;
• Session: Bodo’s Podium (hall 6, booth 143), 6 June (14:30–15:30) – ‘GaN – Devices for the Future Design’ by Alex Lidow;
• Session: GaN Devices (Brüssel 1), 7 June (14–15:15) – ‘High Power Nanosecond Pulse Laser Driver using an eGaN FETs’ by John Glaser;
• Session: GaN Devices (Brüssel 1), 7 June (14:50–15:15) – ‘6.78 MHz Multi Amplifier and Transmit Coil eGaN FET based Class-E Wireless Power System Evaluation’ by Michael de Rooij.

Tags: EPC E-mode GaN FETs GaN-on-Si

Visit: www.mesago.de/en/PCIM/main.htm

Visit: www.epc-co.com