, Teledyne e2v, pSemi and GaN Systems unveil fastest hi-rel GaN power solution, featuring GaN FET and half-bridge driver

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6 March 2018

Teledyne e2v, pSemi and GaN Systems unveil fastest hi-rel GaN power solution, featuring GaN FET and half-bridge driver

© Semiconductor Today Magazine / Juno PublishiPicture: Disco’s DAL7440 KABRA laser saw.

Teledyne e2v inc of Milpitas, CA, USA (which provides solutions, sub-systems and components to the space, transportation, defense and industrial markets) is launching a complete gallium nitride (GaN) power solution based on technology from pSemi Corp of San Diego, CA, USA – a fabless provider of radio-frequency integrated circuits (RFICs) based on silicon-on-insulator (SOI) – and GaN Systems Inc of Ottawa, Ontario, Canada (a fabless developer of GaN-based power switching semiconductors for power conversion and control applications). The solution features GaN field-effect transistors (FETs) and what is claimed to be the first rad-tolerant, half-bridge power driver for GaN high-reliability applications. The technology is being demonstrated in the Teledyne Defense Electronics booth #619 at Satellite 2018 in Washington DC (12-15 March).

After being used in power conversion in other industries, GaN devices are now available as radiation tolerant, space-qualified devices. The release of the GaN FETs and the industry’s fastest half-bridge GaN driver provide the efficiency, size, and power-density benefits required in satellite systems’ critical power applications. The device prototypes are now available for purchase.

Teledyne’s ceramic TDG100E15 100V 15A FET and TDG100E30 100V 30A FET both utilize GaN Systems’ patented Island Technology, which is a scalable, vertical charge-dissipating system that gives the power transistor ultra-low thermal losses, high power density, no-charge storage, and very high switching speeds. The use of industry standard SMD 0.5 ceramic packaging allows very high-frequency switching, excellent thermal characteristics, and a reduced time-to-market.

The second part of the GaN solution is what is claimed to be the industry’s fastest half-bridge GaN driver, based on pSemi’s UltraCMOS technology. The Teledyne TD99101 25MHz GaN driver features a ruggedized design and is qualified for operation in harsh environments, including space. It contains both high-side and low-side GaN drivers capable of sourcing 1A and sinking 2A of current. In addition, it is designed to work with the very low latency and high switching speeds required for GaN system-based Teledyne parts. The TD99101 is the only driver capable of extracting the highest performance and speed benefits of Teledyne’s TDG100E GaN FETs.

To facilitate implementation of GaN technology from Teledyne, the TD99101-x00 evaluation kit is available, featuring both the TD99101 GaN driver and TDG100E15 100V, 15A GaN FET. The evaluation kit operates at frequencies up to 13MHz and allows customer to evaluate Teledyne’s GaN parts quickly.

Manufactured on a MIL-PRF-38535 Class V-like flow, both devices are radiation tolerant, suitable for space applications, and have ceramic-packaged prototypes available now.

“Teledyne e2v has a proud heritage of space products, and we are excited to bring the unprecedented efficiency of GaN power to our customers,” says the firm’s VP of business development Mont Taylor. “The wide range of capabilities of these devices enable design engineers to create highly efficient power supply and motor control applications which can function in radiation environments.”

See related items:

e2v to supply GaN Systems' 100V and 650V hi-rel GaN transistors to global aerospace & defense industry

Tags: GaN Systems E-mode GaN FETs Power electronics Peregrine SOI

Visit: http://2018.satshow.com

Visit: www.gansystems.com

Visit: www.psemi.com

Visit: www.e2v.com/products/semiconductors/power-solutions

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