14 March 2018
MACOM launches quad-channel 64G linear modulator driver die for long-haul, metro and data-center interconnect applications
© Semiconductor Today Magazine / Juno PublishiPicture: Disco’s DAL7440 KABRA laser saw.
In booth #2613 at the Optical Networking and Communication Conference & Exhibition (OFC 2018) in San Diego (13-15 March), MACOM Technology Solutions Inc of Lowell, MA, USA (which makes semiconductors, components and subassemblies for RF, microwave, millimeter-wave and lightwave applications) has launched the MAOM-006408, a quad-channel linear differential modulator driver in a single die for 64GBaud long-haul, metro and data-center interconnect (DCI) applications using high-order modulation schemes up to 64QAM. The device features low power consumption, high bandwidth and what is claimed to be excellent linearity, all in the smallest die form factor, which is expected to be required for meeting both the HB-CDM and IC-TROSA standards currently being developed by the Optical Internetworking Forum (OIF).
As telecom operators and Internet content providers continue to drive the demand for increased data rates and faceplate density, the OIF is working to support these efforts with components standards for 64Gbaud and 64 QAM in small form factors. To meet these requirements for smaller size and higher frequency operation, package-level integration of the driver and Mach-Zehnder (MZ) modulator becomes advantageous, says MACOM. This drives the need for quad-channel linear drivers in a single die compared with existing discrete driver solutions, where multiple die are integrated in a surface-mount module.
“MACOM has been at the forefront of innovation in modulator drivers throughout the deployment of coherent technology over the last seven years, and our latest modulator driver portfolio for 64Gbaud systems extends our leadership position into the next generation of 400G deployments and beyond,” believes Rajiv Somisetty, senior product manager, Networks, at MACOM.
The MAOM-006408 integrates four channels in a single silicon germanium (SiGe) die with full digital control via Serial Peripheral Interface (SPI). It has been optimized for minimum power consumption while also providing flexibility for use with different MZ modulators. It also offers full analog and digital control, which is anticipated to meet the requirements for both the HB-CDM and IC-TROSA standards.