, MACOM showcasing RF portfolio of MMICs, diodes and GaN-on-Si devices at EDICON

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8 March 2018

MACOM showcasing RF portfolio of MMICs, diodes and GaN-on-Si devices at EDICON

© Semiconductor Today Magazine / Juno PublishiPicture: Disco’s DAL7440 KABRA laser saw.

In booth #418 at the Electronic Design Innovation Conference (EDI CON China 2018) at the China National Convention Center in Beijing (20-22 March), MACOM Technology Solutions Inc of Lowell, MA, USA (which makes semiconductors, components and subassemblies for RF, microwave, millimeter-wave and lightwave applications) is showcasing its RF portfolio of MMICs, diodes and GaN-on-silicon devices, as follows:

  • MATK-102425-300: RF Energy Toolkit live demonstration;
  • RF Plasma ‘Torch’ live demonstration;
  • new silicon-based solutions for high-performance narrowband voltage-controlled oscillator (VCO) portfolio’;
  • complete portfolio of wireless access front-end components and modules for 4G and 5G applications;
  • compact Tx and Rx front-end modules (FEMs) for 5G M-MIMO applications; and
  • high-power PIN diode switches.

Also, MACOM representatives will be present at the following workshops and panels:

  • 20 March (2:15pm) –5G Massive MIMO Panel By Microwave Journal – Anthony Fischetti;
  • 20 March (4:30pm) – AM/PM Distortion of GaN HEMT Workshop – Mengsu Yang;
  • 21 March (1:05pm) – GaN Technology Panel Session By Microwave Journal – Michael Ziehl;
  • 22 March (9:05am) – The Solid State RF Energy – Inroads to the Industrial Market Panel– Mark Murphy.

Tags: M/A-COM GaN-on-Si

Visit: www.ediconchina.com

Visit: www.macom.com

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