5 March 2018
Littelfuse exhibiting expanding power semiconductor portfolio at APEC
© Semiconductor Today Magazine / Juno PublishiPicture: Disco’s DAL7440 KABRA laser saw.
Littelfuse Inc of Chicago, IL, USA, which provides circuit protection technologies (including fuses, semiconductors, polymers, ceramics, relays and sensors), says that IXYS Corp of Milpitas, CA, USA and Leiden, The Netherlands (which it acquired in January) and Monolith Semiconductor Inc of Round Rock, TX, USA, a developer of silicon carbide (SiC) technology in which Littelfuse holds a controlling interest, are exhibiting their growing power semiconductor portfolio in the Littelfuse booth #1619 at the Applied Power Electronics Conference & Exposition (APEC 2018) in San Antonio, Texas (4–8 March).
The portfolio expansion is the result of the IXYS acquisition and the latest additions to the SiC metal-oxide-semiconductor field-effect transistor (MOSFET) and diode product line from Monolith. This year’s conference activities also include a panel discussion, in-booth demonstrations, and industry session presentations.
A broader power semiconductor portfolio
Littelfuse and IXYS are making their first joint public appearance at APEC to talk about plans to market what has now become one of the industry’s broadest power semiconductor product portfolios, it is reckoned. The IXYS acquisition adds new technologies for the manufacturing of power modules, high-temperature/low-loss discretes, medium- and high-power thyristors, fast recovery diodes and rectifiers, industrial IGBTs, MOSFETs, driver and control ICs, and optical and solid-state relays. These complement existing Littelfuse technologies, which include low-power thyristors, ignition IGBTs, and SiC Schottky diodes and MOSFETs. The IXYS acquisition significantly broadens the Littelfuse power semiconductor portfolio and power electronics applications expertise, and allows serving the full range of power semiconductor needs.
“During the last few years, IXYS and Littelfuse have been expanding their product platforms to pursue many of the same markets,” says Corey Deyalsingh, director, Power Semiconductors at Littelfuse. “The IXYS acquisition gives Littelfuse customers a single source for power semiconductors, so no matter what the application is, Littelfuse can support it with the delivery and application support customers need on a global scale,” he adds. “The product technology reach means we can offer customers unbiased advice on the best solutions for their applications. Together, we provide power electronics design engineers the advanced application expertise they need to innovate at the very highest levels while complying with changing global standards.”
In-booth demonstrations of Littelfuse technologies include the Dynamic Characterization Platform for characterizing SiC device switching behavior and the Gate Drive Evaluation Platform for studying the optimal device driving conditions for specific applications. In addition, Texas Instruments is exhibiting its 10kW, 1kV, 3-phase, 3-level SiC-based Grid Tie Inverter Reference Design for a transformer-less solar string inverter with 99% peak efficiency, industry-leading power density, and 50kHz switching using SiC from Littelfuse–Monolith.
Expert panel discussion
Littelfuse is sponsoring an expert panel discussion on 6 March (1:30-2pm in Room 214B) on ‘The Path to Predictable, High-Volume, High-Yield Manufacturing of SiC Devices’, describing making the transition from 3-inch and 4-inch SiC wafers to 6-inch SiC wafers and developing design and process techniques that are compatible with processes in a silicon CMOS fab. Speakers include Monolith’s CEO Sujit Banerjee, Andy Wilson, business unit manager at X-FAB SiC Foundry, and Vladimir Blasko, senior fellow at United Technologies Research Center.
Industry session presentations
During the conference, Monolith will give three industry session presentations:
- ‘Unleash SiC MOSFETs—Extract the Best Performance’, 6 March (room 212, 9:30am);
- ‘Are Antiparallel Diodes Needed for SiC MOSFETs?’, 7 March (room 207, 9:45am);
- ‘Scalable Platform for In-Circuit Reliability Testing of SiC MOSFETs and Diodes Emulating Real-life Voltage and Current Stresses’, 8 March (room 206, 3:20pm).