29 March 2018

Integra launches L-band GaN-based amplifiers

© Semiconductor Today Magazine / Juno PublishiPicture: Disco’s DAL7440 KABRA laser saw.

Integra Technologies Inc of El Segundo, CA, USA (which designs and manufactures high-power RF and microwave transistors and power amplifiers) has launched two new L-band gallium nitride (GaN)-based amplifiers.

The IGNP0912L1KW is a 50Ω-matched GaN-based high-power pulsed pallet amplifier for L-band avionics systems operating over the instantaneous bandwidth of 0.960-1.215GHz. Supplying minimum peak pulse power of 1000W under the conditions of 2.5ms pulse width and 20% duty cycle, the new pallet amplifier is suitable for Class AB operation with what is claimed to be excellent thermal stability. The IGNP0912L1KW has a gain of 12.0dB, frequency of 0.1-1.0GHz and a voltage of 28V.

Also, the IGNP1214M1KW-GPS is a single-supply 50Ω-matched GaN-based pulsed power pallet amplifier for L-band radar systems, operating in the 1.2-1.4GHz instantaneous frequency band. The high-efficiency, low-input/output VSWR pallet amplifier supplies a minimum of 1000W of peak pulsed output power under the conditions of 300µs pulse width and 10% duty cycle. The pallet contains bias sequencing and RF-activated gate biasing circuitry to simplify system integration.

All devices are 100% screened for large-signal RF parameters.

Tags: Integra

Visit: www.integratech.com