6 March 2018
GaN Systems launches record 100V/120A GaN power transistor
© Semiconductor Today Magazine / Juno PublishiPicture: Disco’s DAL7440 KABRA laser saw.
In booth #1041 at the Applied Power Electronics Conference & Exposition (APEC 2018) in San Antonio, TX, USA (4-8 March), GaN Systems Inc of Ottawa, Ontario, Canada (a fabless developer of gallium nitride-based power switching semiconductors for power conversion and control applications) has unveiled what it claims is the highest-current and most power efficient 100V GaN power transistor.
The GS-010-120-1-T 100V, 120A, 5mΩ GaN enhancement-mode high-electron-mobility transistor (E-HEMT) is 1.3x the current rating of GaN Systems’ own 90A part and 2.4-4.6x the current rating of other high-current GaN in the industry, it is reckoned. The GS-010-120-1-T is an E-mode GaN-on-silicon power transistor that leverages all of the die design and packaging advantages delivered by GaN Systems.
The transistor is suitable for the growing 48V applications in the automotive, industrial and renewable energy industries which require power systems with high power levels in smaller-size form factors. GaN Systems says that bringing products like the GS-010-120-1-T to market results in realizations such as longer-range electrical vehicles, lower-operating-cost renewable energy equipment, and smaller, highly integrated industrial power equipment.
In addition, the new transistor enables greater design flexibility and affords options for immediate specification changes. It is footprint-compatible with GaN Systems’ GS61008T 100V, 90A GaN E-HEMT, enabling customers to add further power by substituting the GS-010-120-1-T without changing their board. Increasing the current capability in the same size package allows an effective increase in power of 33% for the same system volume.
“Our technology roadmap is positioned to deliver to the growing need of best-in-class GaN technology solutions in 100V as well as 650V applications,” says Larry Spaziani, VP sales & marketing. “The new 100V, 120A GaN E-HEMT – along with our recently announced 650V, 120A GaN E-HEMT – are among a significant number of recent high-performance GaN transistors and solutions we have introduced.” The firm’s intention is to “continuously provide products designed to exceed power system efficiency and reliability requirements in today’s most demanding applications”.