, EPC launches two eGaN ICs combining gate drivers with high-frequency GaN FETs for improved efficiency, reduced size and lower cost

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8 March 2018

EPC launches two eGaN ICs combining gate drivers with high-frequency GaN FETs for improved efficiency, reduced size and lower cost

© Semiconductor Today Magazine / Juno PublishiPicture: Disco’s DAL7440 KABRA laser saw.

Efficient Power Conversion Corp (EPC) of El Segundo, CA, USA – which makes enhancement-mode gallium nitride on silicon (eGaN) power field-effect transistors (FETs) for power management applications – has launched the EPC2112 and EPC2115 enhancement-mode monolithic GaN power transistor with integrated driver products.

The EPC2112 is a 200V, 40mΩ eGaN FET plus integrated gate driver. In comparison, the EPC2115 is an integrated circuit with dual 150V, 70mΩ eGaN FETs plus gate drivers. Both products are capable of operating up to 7MHz and are available in low-inductance, extremely small (2.9mm x 1.1mm) ball-grid array (BGA) surface-mount passivated die.

The monolithic ICs enable designers to improve efficiency, save space and lower costs compared with silicon-based solutions. The ultra-low capacitance and zero reverse recovery of eGaN FETs enable efficient operation in many topologies, says EPC.

In both products, the integrated driver is specifically matched to the eGaN device to yield optimal performance under various operating conditions. Performance is further enhanced due to the small, low-inductance footprint. Monolithic integration eliminates interconnect inductances for higher efficiency at high frequency. This is especially important for high-frequency applications, such as resonant wireless power, and high-frequency DC-DC conversion.

As design examples for the new ICs, two differential class-E amplifier development boards are available for order. The EPC9089 is an AirFuel Alliance-compatible class 4 (33W) and uses the EPC2112. The EPC9088 is a class 3 (16W) amplifier using the EPC2115. The EPC2112 is also featured in the new EPC9131 demonstration board for a 300kHz SEPIC converter low-voltage DC-DC application.

The EPC2112 monolithic integrated gate driver and GaN FET is priced at $3.29 each and the EPC2115 integrated gate driver with dual GaN FETs at $3.44 each, both for 1000-unit quantities.

The EPC9088 and EPC9089 development boards are $158.13 and $159.13, respectively. The EPC9131 is priced at $215.62

All of these products are available for order from distributor Digi-Key Corp.

Tags: EPC E-mode GaN FETs GaN-on-Si

Visit: http://www.digikey.com/Suppliers/us/Efficient-Power-Conversion.page?lang=en

Visit: www.epc-co.com

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