7 March 2018
Analog Devices introduces high-power and high-voltage isolated-gate driver board for Microsemi SiC power modules
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In collaboration with Microsemi Corp of Aliso Viejo, CA, USA, Analog Devices Inc of Norwood, MA, USA (which provides mixed-signal ICs for cable access) has introduced a high-power evaluation board for half-bridge silicon carbide (SiC) power modules with up to 1200V and 50A at 200kHz switching frequency. The isolated board is engineered to improve design reliability while also reducing the need to create additional prototypes — saving time, lowering costs and decreasing time to market for power conversion and energy storage customers, it is claimed. Analog Devices and Microsemi are showcasing the board at the Applied Power Electronics Conference & Exposition (APEC 2018) in San Antonio, Texas (4–8 March).
The new board can be used as the building block of more complex topologies, such as full-bridge or multi-level converters, for complete bench debugging of customer solutions. It can also function as a final evaluation platform or in converter-like configuration for full test and evaluation of Analog Devices’ ADuM4135 isolated-gate driver with iCoupler digital isolation technology and LT3999 DC-DC driver in a high-power system.
Priced at $495, the EV-MS4135PL1Z-UI high-power evaluation board enables Microsemi’s SiC power modules to provide benefits such as a common test bench, higher power density for reduced size and cost, and isolated and conductive substrate and minimum parasitic capacitance for higher efficiency, performance, and thermal management. These attributes make the board suitable for applications including electric vehicle (EV) charging, hybrid EV (HEV)/EV onboard charging, DC-DC converters, switched mode power supply (SMPS), high-power motor control and aviation actuation systems, plasma/semi cap equipment, lasers and welding, MRI and x-rays.