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13 June 2018

WIN releases platform integrating 0.1µm GaAs pHEMTs with monolithic PIN and vertical Schottky diodes

© Semiconductor Today Magazine / Juno PublishiPicture: Disco’s DAL7440 KABRA laser saw.

WIN Semiconductors Corp of Taoyuan City, Taiwan – the largest pure-play compound semiconductor wafer foundry – has expanded its portfolio of highly integrated gallium arsenide (GaAs) technologies with the release of a new pseudomorphic high-electron-mobility transistor (pHEMT) technology.

The PIH0-03 platform adds a highly linear vertical Schottky diode (with a cut-off frequency of more than 600GHz) as well as multi-function PIN diodes, monolithically integrated with WIN’s mature PP10 high-performance 0.1µm pHEMT process while preserving its state-of-the-art millimetre-wave performance. WIN says that the availability of monolithic PIN and Schottky diodes with a high-performance millimeter-wave transistor enables on-chip integration of a wide range of functions, including mixers, temperature/power detecting, limiters and high-frequency switching, and supports power, low noise and optical applications through100GHz.

The integrated technology provides multiple pathways to add on-chip functionality and reduce the overall die count of complex multi-chip modules used in a variety of end-markets, says the firm. In addition to high-frequency switching, the monolithic PIN diodes can be used for low-parasitic-capacitance ESD protection circuits, and as an on-chip power limiter to protect sensitive low-noise amplifiers (LNAs) in phased-array radars. The vertical Schottky diodes enable numerous detecting and mixing functions and can be combined with the PIN diodes in unique limiter applications.

“Today's complex systems and highly competitive markets require increased mmWave performance and more functionality per chip,” says senior VP David Danzilio. “The PIH0-03 platform is the latest example of how WIN Semiconductors is addressing these critical market needs by offering high-performance GaAs technologies with new levels of multi-function integration,” he adds. “To meet the ever-increasing demands of next-generation mobile user equipment, wireless infrastructure, fiber-optic and military applications, WIN Semiconductors continues to commercialize advanced, highly integrated GaAs solutions.”

WIN is showcasing its compound semiconductor RF and mm-Wave solutions in booth 415 at the IEEE MTT-S International Microwave Symposium (IMS 2018) in Philadelphia, PA, USA (10-15 June).

See related items:

WIN enables fully integrated single-chip GaAs solutions for 5G RF front-end modules

Tags: WIN Semiconductors

Visit: www.winfoundry.com

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