Temescal

Semigas

CLICK HERE: free registration for Semiconductor Today and Semiconductor Today ASIACLICK HERE: free registration for Semiconductor Today and Semiconductor Today ASIA

Join our LinkedIn group!

Follow ST on Twitter

IQE

7 June 2018

VisIC raises $10m to expand GaN power device portfolio and address more market segments

© Semiconductor Today Magazine / Juno PublishiPicture: Disco’s DAL7440 KABRA laser saw.

VisIC Technologies Ltd of Nes Ziona, Israel – a fabless developer of power conversion devices based on gallium nitride (GaN) metal-insulator-semiconductor high-electron-mobility transistors (MISHEMTs) – has closed a $10m Series D round of financing led by a private investor.

The electrification of automotive vehicles has been growing at an unprecedented pace recently and will continue to grow for the foreseeable future, says the firm. GaN power devices get the maximum performance out of high-power, high-voltage power conversion systems inside hybrid and electric vehicles (HEV/EV). The improved size, weight, efficiency and heat management of the on-board charger and the DC/DC converter, designed with GaN power devices, all contribute to faster charging and longer driving range. High-performance power supplies for telecom systems and datacenters are using GaN power devices to reach new levels of density and efficiency, notes VisIC, bringing down the electricity costs of the operators significantly.

“GaN technology opens a new space in power electronics - from shifting the performance envelope up to the point of new topologies development. We are delighted to see VisIC offering specifically rugged GaN devices with negligible fast transient dynamic RDSon,” comments Ivan Feno, principal power design engineer at Bel Power Solutions. “The insulated thermal pad is another welcome feature enabling the increase of the power-stage reliability and density,” he adds. “Ultimately, 1200V-rated GaN devices might be an attractive alternative in the 1200V segment dominated by SiC technology today.”

VisIC says that its technology, in combination with ongoing R&D designs by large players in the power electronics industry, made it possible to close this round of funding on favorable terms.

“With the new funding, we can expand our portfolio further to address more market segments,” says founder & CEO Tamara Baksht. “Furthermore, we will increase our technical support team to assist our growing worldwide customer base.”

See related items:

VisIC samples first 1200V GaN power module

VisIC raises $11.6m in Series C round of financing

VisIC launches 1200V family of GaN power switching devices with integral iso-driver

Tags: GaN-on-Si power transistor

Visit: www.visic-tech.com

Share/Save/Bookmark
See Latest IssueRSS Feed

AXT